Deposition of Ti-AI-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias

Ti-Al-N hard films have been prepared by cathodic arc deposition by using an unipolar pulsed bias.In the present study,Ti-Al-N films were deposited on stainless steel and silicon wafers.The deposition rate,micrograph,preferred orientation and composition were systematically investigated by usingx-ra...

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Veröffentlicht in:等离子体科学和技术:英文版 2013 (6), p.542-545
1. Verfasser: 张国平 王兴权 吕国华 庞华 周澜 陈维 黄骏 杨思泽
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Sprache:eng
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Zusammenfassung:Ti-Al-N hard films have been prepared by cathodic arc deposition by using an unipolar pulsed bias.In the present study,Ti-Al-N films were deposited on stainless steel and silicon wafers.The deposition rate,micrograph,preferred orientation and composition were systematically investigated by usingx-ray diffraction(XRD),energy dispersive X-ray spectroscopy(EDX), and a scanning electron microscope(SEM).It is shown that substate bias duty cycle and frequency have a great effect on film structure.A simple explanation for the results is also presented.
ISSN:1009-0630