Peculiarities of ZnCdSe Nanolayers by Chemical Deposition
In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conduc...
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| Veröffentlicht in: | 化学与化工：英文版 2013, Vol.7 (3), p.402-408 |
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| container_title | 化学与化工：英文版 |
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| creator | M. A. Jafarov E. F. Nasirov |
| description | In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 〈 x 〈 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Znl.xCdxSe （0 ≤ x≤0.6） films is observed at λ1 = 0.545 ＋ 0.495 μm versus the film composition. |
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Nasirov</creatorcontrib><description>In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 〈 x 〈 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Znl.xCdxSe （0 ≤ x≤0.6） films is observed at λ1 = 0.545 ＋ 0.495 μm versus the film composition.</description><identifier>ISSN: 1934-7375</identifier><identifier>EISSN: 1934-7383</identifier><language>eng</language><subject>ZnCdSe ; 光电参数 ; 光电导谱 ; 化学沉积 ; 太阳光谱 ; 溶液沉淀 ; 纳米层 ; 纳米薄膜</subject><ispartof>化学与化工：英文版, 2013, Vol.7 (3), p.402-408</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/89596X/89596X.jpg</thumbnail><link.rule.ids>314,777,781,4010</link.rule.ids></links><search><creatorcontrib>M. A. Jafarov E. F. Nasirov</creatorcontrib><title>Peculiarities of ZnCdSe Nanolayers by Chemical Deposition</title><title>化学与化工：英文版</title><addtitle>Journal of Chemistry and Chemical Engineering</addtitle><description>In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 〈 x 〈 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Znl.xCdxSe （0 ≤ x≤0.6） films is observed at λ1 = 0.545 ＋ 0.495 μm versus the film composition.</description><subject>ZnCdSe</subject><subject>光电参数</subject><subject>光电导谱</subject><subject>化学沉积</subject><subject>太阳光谱</subject><subject>溶液沉淀</subject><subject>纳米层</subject><subject>纳米薄膜</subject><issn>1934-7375</issn><issn>1934-7383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpjYuA0tDQ20TU3tjBmgbPNTTkYeIuLswyAwNTE3NjEiJPBMiA1uTQnM7EosyQztVghP00hKs85JThVwS8xLz8nsTK1qFghqVLBOSM1NzM5MUfBJbUgvxioNj-Ph4E1LTGnOJUXSnMzKLq5hjh76CZn5OelF2bmpccXFGXmJhZVxpuYWhqbgtxCjBoA6X03Fw</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>M. A. Jafarov E. F. 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Nasirov</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>化学与化工：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>M. A. Jafarov E. F. Nasirov</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Peculiarities of ZnCdSe Nanolayers by Chemical Deposition</atitle><jtitle>化学与化工：英文版</jtitle><addtitle>Journal of Chemistry and Chemical Engineering</addtitle><date>2013</date><risdate>2013</risdate><volume>7</volume><issue>3</issue><spage>402</spage><epage>408</epage><pages>402-408</pages><issn>1934-7375</issn><eissn>1934-7383</eissn><abstract>In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 〈 x 〈 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Znl.xCdxSe （0 ≤ x≤0.6） films is observed at λ1 = 0.545 ＋ 0.495 μm versus the film composition.</abstract></addata></record> |
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| ispartof | 化学与化工：英文版, 2013, Vol.7 (3), p.402-408 |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | ZnCdSe 光电参数 光电导谱 化学沉积 太阳光谱 溶液沉淀 纳米层 纳米薄膜 |
| title | Peculiarities of ZnCdSe Nanolayers by Chemical Deposition |
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