Peculiarities of ZnCdSe Nanolayers by Chemical Deposition

In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 〈 x 〈 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Znl.xCdxSe （0 ≤ x≤0.6） films is observed at λ1 = 0.545 ＋ 0.495 μm versus the film composition.