Performance improvement of blue light-emitting diodes with an AIInN/GaN superlattice electron-blocking layer

The characteristics of a blue light-emitting diode （LED） with an AIlnN/GaN superlattice （SL） electron-blocking layer （EBL） are analyzed numerically. The carder concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AIInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AIGaN EBL or a A1GaN/GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.