Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and dono...

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Veröffentlicht in:	中国物理B：英文版 2012-10, Vol.21 (10), p.435-438
1. Verfasser:	谷承艳刘贵鹏时凯宋亚峰李成明刘祥林杨少延朱勤生王占国
Format:	Artikel
Sprache:	eng
Schlagworte:	二维电子气厚度波动调制掺杂量子散射量子阱结构间隔层
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Zusammenfassung:	We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.
ISSN:	1674-1056 2058-3834
DOI:	10.1088/1674-1056/21/10/107305