Characterization and Optimization of In2O3 Thin Films for Application in Silicon Solar Cells

This investigation elucidates the properties of indium oxide （In2O3） thin films used as antireflection front electrodes in p-n junction solar cells. The deposition conditions of In2O3 film by spray pyrolysis were optimized for solar cell applications. Microstructure, surface morphology and optical properties of these films were then characterized and analyzed. Next, the effects of substrate temperature on In2O3 film growth were discussed. The In2O3 thickness was optimized considering that the refractive index of μc-Si emitter layer optimizes its optical characteristics and solar cell spectral response. The increasing in solar cell conversion efficiency was 7.4% with an open circuit voltage （Voc） of 0.48 V, fill factor （FF） of 0.473, and short circuit current density （Jsc） of 13.2 mA/cm^2. The optimum thickness and refractive index obtain a minimum reflectance for a single-layer ARC.