Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction
Ca3Co409/Nb-SrTiO3 heterojunction with good rectifying behavior at room temperature was fabricated by growing a layer of Ca3Co409 film on the lwt% Nb-doped SrTiO3 substrate by means of the chemical solution deposition technique. A large open-circuit voltage signal with the response time of tens of n...
Gespeichert in:
| Veröffentlicht in: | 中国科学：物理学、力学、天文学英文版 2012, Vol.55 (5), p.772-775 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 775 |
|---|---|
| container_issue | 5 |
| container_start_page | 772 |
| container_title | 中国科学：物理学、力学、天文学英文版 |
| container_volume | 55 |
| creator | WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng |
| description | Ca3Co409/Nb-SrTiO3 heterojunction with good rectifying behavior at room temperature was fabricated by growing a layer of Ca3Co409 film on the lwt% Nb-doped SrTiO3 substrate by means of the chemical solution deposition technique. A large open-circuit voltage signal with the response time of tens of nanosecond was observed at room temperature when the Ca3Co409 layer of the heterojunction was illuminated under the 308 nm irradiation and no voltage signal was detected under the 10.6 gun irradiation. A mechanism based on the photovoltaic effect of a p-n junction was proposed to explain the experimental results. The present work shows a great potential of this new heterojunction as photoelectric devices. |
| format | Article |
| fullrecord | <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_41556467</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>41556467</cqvip_id><sourcerecordid>41556467</sourcerecordid><originalsourceid>FETCH-chongqing_primary_415564673</originalsourceid><addsrcrecordid>eNqNiksOgjAUABujiUS5Qz1AI9hCYU38rNRE9qSWT0uwD9tq4u1l4QGczcxiZiiIszQncb7j86lTzginLFui0Lk-mqB5xDgL0PGqwMMbBi-0xFIJK6RvrHZeS4ehxYWgBbAo357vpIaxqfHNlvpCsWqmD_qXkV6DWaNFKwbXhD-v0OawL4sTkQpM99Smq0arH8J-KhYnScpSTv95vkCGO8c</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction</title><source>SpringerLink Journals</source><source>Alma/SFX Local Collection</source><creator>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</creator><creatorcontrib>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</creatorcontrib><description>Ca3Co409/Nb-SrTiO3 heterojunction with good rectifying behavior at room temperature was fabricated by growing a layer of Ca3Co409 film on the lwt% Nb-doped SrTiO3 substrate by means of the chemical solution deposition technique. A large open-circuit voltage signal with the response time of tens of nanosecond was observed at room temperature when the Ca3Co409 layer of the heterojunction was illuminated under the 308 nm irradiation and no voltage signal was detected under the 10.6 gun irradiation. A mechanism based on the photovoltaic effect of a p-n junction was proposed to explain the experimental results. The present work shows a great potential of this new heterojunction as photoelectric devices.</description><identifier>ISSN: 1674-7348</identifier><identifier>EISSN: 1869-1927</identifier><language>eng</language><subject>SrTiO3 ; 信号检测 ; 光伏特性 ; 化学溶液 ; 异质结 ; 沉积技术 ; 电压信号 ; 钛酸锶</subject><ispartof>中国科学：物理学、力学、天文学英文版, 2012, Vol.55 (5), p.772-775</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60109X/60109X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</creatorcontrib><title>Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction</title><title>中国科学：物理学、力学、天文学英文版</title><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><description>Ca3Co409/Nb-SrTiO3 heterojunction with good rectifying behavior at room temperature was fabricated by growing a layer of Ca3Co409 film on the lwt% Nb-doped SrTiO3 substrate by means of the chemical solution deposition technique. A large open-circuit voltage signal with the response time of tens of nanosecond was observed at room temperature when the Ca3Co409 layer of the heterojunction was illuminated under the 308 nm irradiation and no voltage signal was detected under the 10.6 gun irradiation. A mechanism based on the photovoltaic effect of a p-n junction was proposed to explain the experimental results. The present work shows a great potential of this new heterojunction as photoelectric devices.</description><subject>SrTiO3</subject><subject>信号检测</subject><subject>光伏特性</subject><subject>化学溶液</subject><subject>异质结</subject><subject>沉积技术</subject><subject>电压信号</subject><subject>钛酸锶</subject><issn>1674-7348</issn><issn>1869-1927</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNiksOgjAUABujiUS5Qz1AI9hCYU38rNRE9qSWT0uwD9tq4u1l4QGczcxiZiiIszQncb7j86lTzginLFui0Lk-mqB5xDgL0PGqwMMbBi-0xFIJK6RvrHZeS4ehxYWgBbAo357vpIaxqfHNlvpCsWqmD_qXkV6DWaNFKwbXhD-v0OawL4sTkQpM99Smq0arH8J-KhYnScpSTv95vkCGO8c</recordid><startdate>2012</startdate><enddate>2012</enddate><creator>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2012</creationdate><title>Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction</title><author>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_415564673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>SrTiO3</topic><topic>信号检测</topic><topic>光伏特性</topic><topic>化学溶液</topic><topic>异质结</topic><topic>沉积技术</topic><topic>电压信号</topic><topic>钛酸锶</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国科学：物理学、力学、天文学英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WANG ShuFang LIU FuQiang YAN GuoYing CHEN ShanShan CHEN JingChun WANG JiangLong Yu Wei FU GuangSheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction</atitle><jtitle>中国科学：物理学、力学、天文学英文版</jtitle><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><date>2012</date><risdate>2012</risdate><volume>55</volume><issue>5</issue><spage>772</spage><epage>775</epage><pages>772-775</pages><issn>1674-7348</issn><eissn>1869-1927</eissn><abstract>Ca3Co409/Nb-SrTiO3 heterojunction with good rectifying behavior at room temperature was fabricated by growing a layer of Ca3Co409 film on the lwt% Nb-doped SrTiO3 substrate by means of the chemical solution deposition technique. A large open-circuit voltage signal with the response time of tens of nanosecond was observed at room temperature when the Ca3Co409 layer of the heterojunction was illuminated under the 308 nm irradiation and no voltage signal was detected under the 10.6 gun irradiation. A mechanism based on the photovoltaic effect of a p-n junction was proposed to explain the experimental results. The present work shows a great potential of this new heterojunction as photoelectric devices.</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-7348 |
| ispartof | 中国科学：物理学、力学、天文学英文版, 2012, Vol.55 (5), p.772-775 |
| issn | 1674-7348 1869-1927 |
| language | eng |
| recordid | cdi_chongqing_primary_41556467 |
| source | SpringerLink Journals; Alma/SFX Local Collection |
| subjects | SrTiO3 信号检测 光伏特性 化学溶液 异质结 沉积技术 电压信号 钛酸锶 |
| title | Photovoltaic characteristics of Ca3Co409/Nb-doped SrTiO3 heterojunction |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T11%3A30%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photovoltaic%20characteristics%20of%20Ca3Co409/Nb-doped%20SrTiO3%20heterojunction&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%A7%91%E5%AD%A6%EF%BC%9A%E7%89%A9%E7%90%86%E5%AD%A6%E3%80%81%E5%8A%9B%E5%AD%A6%E3%80%81%E5%A4%A9%E6%96%87%E5%AD%A6%E8%8B%B1%E6%96%87%E7%89%88&rft.au=WANG%20ShuFang%20LIU%20FuQiang%20YAN%20GuoYing%20CHEN%20ShanShan%20CHEN%20JingChun%20WANG%20JiangLong%20Yu%20Wei%20FU%20GuangSheng&rft.date=2012&rft.volume=55&rft.issue=5&rft.spage=772&rft.epage=775&rft.pages=772-775&rft.issn=1674-7348&rft.eissn=1869-1927&rft_id=info:doi/&rft_dat=%3Cchongqing%3E41556467%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=41556467&rfr_iscdi=true |