Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation
Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu2ZnSnS4(CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550℃for 3 h.Fabricated CZTS thin films were characterized by X-ray di...
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Veröffentlicht in: | 半导体学报 2012-02, Vol.33 (2), p.14-17 |
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Format: | Artikel |
Sprache: | chi ; eng |
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Zusammenfassung: | Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu2ZnSnS4(CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550℃for 3 h.Fabricated CZTS thin films were characterized by X-ray diffraction,energy dispersive X-ray spectroscopy,ultraviolet-visible-near infrared spectrophotometry,the Hall effect system,and 3D optical microscopy.The experimental results show that,when the ratios of[Cu]/([Zn]+[Sn]) and[Zn]/[Sn]in the CZTS are 0.83 and 1.15,the CZTS thin films possess an absorption coefficient of larger than 4.0 x 104 cm-1 in the energy range 1.5-3.5 eV,and a direct band gap of about 1.47 eV.The carrier concentration,resistivity and mobility of the CZTS film are 6.98 x 1016 cm-3,6.96Ω-cm,and 12.9 cm2/(V-s),respectively and the conduction type is p-type.Therefore,the CZTS thin films are suitable for absorption layers of solar cells. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/33/2/022002 |