Conductive Properties of Electron Beam Evaporated a-Si1-x Gdx Films

The properties of temperature dependence of conductivity σ of electron beam evaporateda-Si1-xGdx films which was deposited on some substrates of glass and Al-foil at a substrate temperature ofapproximately 300℃ in a background pressure about 2×10-4 Pa with a deposition speed about 0.2 nm/swas analyzed and studied.The forms of Gd3+ ions in the films,the dangling bond compensation achieved byGd3+ ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele-ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si1-xGdx films.Inthe temperature region of 290 K<T<500 K,an analysis of conductivity allows to reveal two conductivityregions:（1）conducting conduction of the carriers excited to conductive band,（2）hopping conduction of thecarriers in the impurity band near EF level thermo-excited.