Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity
Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excel...
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| Veröffentlicht in: | 中国科学通报：英文版 1993 (6), p.510-513 |
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| container_title | 中国科学通报：英文版 |
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| creator | 吴知非 施云城 陈惠敏 陈英方 |
| description | Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. In PSII, the target specimen to be implanted is placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target from all sides. Generally, PSII offers a number of advantages relative to current ion |
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In PSII, the target specimen to be implanted is placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target from all sides. Generally, PSII offers a number of advantages relative to current ion</description><identifier>ISSN: 2095-9273</identifier><language>eng</language><subject>conductivity ; implantation ; ion ; plasma ; polyimide ; source</subject><ispartof>中国科学通报：英文版, 1993 (6), p.510-513</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,780,784,4022</link.rule.ids></links><search><creatorcontrib>吴知非 施云城 陈惠敏 陈英方</creatorcontrib><title>Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity</title><title>中国科学通报：英文版</title><addtitle>Chinese Science Bulletin</addtitle><description>Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. 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Generally, PSII offers a number of advantages relative to current ion</description><subject>conductivity</subject><subject>implantation</subject><subject>ion</subject><subject>plasma</subject><subject>polyimide</subject><subject>source</subject><issn>2095-9273</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNzs0KgkAUhuFZFCTlPQy0Fo5_iGtJspVQexn868TMHJsZBe8-iS6g1ccLz-LbMS-CPA3yKIsPzLf2BQBhkkcJZB671VJYJfidZtP2vCLNKzVJoZ1wuAUNvCa5osKu5yVKxfErDC2oR16Q7ubW4YJuPbH9IKTt_d8e2bm8PIpr0D5Jj--NN5NBJczaJNuDFOI0hPg_9QGtbjxH</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>吴知非 施云城 陈惠敏 陈英方</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>1993</creationdate><title>Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity</title><author>吴知非 施云城 陈惠敏 陈英方</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_40015035103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>conductivity</topic><topic>implantation</topic><topic>ion</topic><topic>plasma</topic><topic>polyimide</topic><topic>source</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>吴知非 施云城 陈惠敏 陈英方</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国科学通报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>吴知非 施云城 陈惠敏 陈英方</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity</atitle><jtitle>中国科学通报：英文版</jtitle><addtitle>Chinese Science Bulletin</addtitle><date>1993</date><risdate>1993</risdate><issue>6</issue><spage>510</spage><epage>513</epage><pages>510-513</pages><issn>2095-9273</issn><abstract>Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. 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| fulltext | fulltext |
| identifier | ISSN: 2095-9273 |
| ispartof | 中国科学通报：英文版, 1993 (6), p.510-513 |
| issn | 2095-9273 |
| language | eng |
| recordid | cdi_chongqing_primary_4001503510 |
| source | Alma/SFX Local Collection |
| subjects | conductivity implantation ion plasma polyimide source |
| title | Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity |
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