Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity

Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. In PSII, the target specimen to be implanted is placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target from all sides. Generally, PSII offers a number of advantages relative to current ion