Etching mechanism of barium strontium titanate （BST） thin films in CHF_3/Ar plasma

Reactive ion etching was used to etch barium strontium titanate thin films in a CHF3/Ar plasma.BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism,and chemical reactions had occurred between the F plasma and the Ba,Sr and Ti metal species.Fluorides of these metals were formed and remained on the surface during the etching process.Ti was almost completely removed because the TiF4 by-product is volatile.Minor quantities of Ti？F could still be detected by narrow scan X-ray photoelectron spectra,and Ti？F was thought to be present in the form of a metal-oxy-fluoride.These species were investigated from O1s spectra,and a fluoride-rich surface was formed during etching.BaF2 and SrF2 residues were difficult to remove because of their high boiling point.The etching rate was limited to 12.86 nm/min.C？F polymers were not found on the surface,indicating that the removal of BaF2 and SrF2 was important for further etching.A 1-min Ar/15 plasma physical sputtering was carried out for every 4 min of surface etching,which effectively removed remaining surface residue.Sequential chemical reaction and sputtered etching is an effective etching method for barium strontium titanate films.