ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV35 Cl6+ BEAM

ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV35 Cl6+ BEAM

In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has b...

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Veröffentlicht in:核技术：英文版 1992 (3), p.175-181
1. Verfasser: 杨熙宏 韦伦存 李认兴 于金祥 梁斌 任晓棠 王兆江 洪秀花 张利春
Format: Artikel
Sprache:eng
Schlagworte:
analysis
and
Co/Si
Depth
detection
Elastic
implantation
Mass
profile
recoil
Resolution
thin
TiN
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Zusammenfassung:In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
ISSN:1001-8042
2210-3147