Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture...

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Veröffentlicht in:中国科学：技术科学英文版 2009 (1), p.6-9
1. Verfasser: I. V. ANTONOVA M. S. KAGAN E. P. NEUSTROEV S. A. SMAGULOVA
Format: Artikel
Sprache:eng
Schlagworte:
confinement
DLTS
levels
quantum
SiGe
spectra
wells
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Zusammenfassung:Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture intervals was observed in Q-DLTS spectra. Activation energies extracted from Q-DLTS measure-mens are in good agreement with energies of quantum confinement levels in the QW.
ISSN:1674-7321
1869-1900