Flashover in Back-Triggered Photoconductive Semiconductor Switch

Design of a new type of photoconductive semiconductor switches (PCSSs) is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the b...

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Veröffentlicht in:Chinese physics letters 2011, Vol.28 (1), p.106-108
Hauptverfasser: Shi, Wei (卫施), Jia, Ji-Qiang (纪强 贾), Ji, Wei-Li (卫莉 纪), Gui, Huai-Meng (淮濛 桂)
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Sprache:eng
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Zusammenfassung:Design of a new type of photoconductive semiconductor switches (PCSSs) is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 k V under the repetition frequency of 30 Hz.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/1/014205