Effect of collector bias current on the linearity of common-emitter BJT amplifiers

Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (IcQ) in a common-emitter bipolar junction transistor amplifier. The analysis indicates that the larger/CQ is, the more linear the amplifier is. Furthermore,...

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Veröffentlicht in:Journal of semiconductors 2010-12, Vol.31 (12), p.75-79
Hauptverfasser: Li, Kun (琨李), Teng, Jianfu (建辅 滕), Xuan, Xiuwei (秀巍 轩)
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Sprache:eng
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Zusammenfassung:Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (IcQ) in a common-emitter bipolar junction transistor amplifier. The analysis indicates that the larger/CQ is, the more linear the amplifier is. Furthermore, this has been verified by experiment. This study also integrates a method called dynamic bias current for expanding the dynamic range of an LNA (low noise amplifier) as an application of the analysis result obtained above. IMR3 (3rd-order intermodulation rate) is applied to evaluate the LNA's performance with and without adopting this method in this study.
ISSN:1674-4926
DOI:10.1088/1674-4926/31/12/124012