Effect of collector bias current on the linearity of common-emitter BJT amplifiers
Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (IcQ) in a common-emitter bipolar junction transistor amplifier. The analysis indicates that the larger/CQ is, the more linear the amplifier is. Furthermore,...
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Veröffentlicht in: | Journal of semiconductors 2010-12, Vol.31 (12), p.75-79 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (IcQ) in a common-emitter bipolar junction transistor amplifier. The analysis indicates that the larger/CQ is, the more linear the amplifier is. Furthermore, this has been verified by experiment. This study also integrates a method called dynamic bias current for expanding the dynamic range of an LNA (low noise amplifier) as an application of the analysis result obtained above. IMR3 (3rd-order intermodulation rate) is applied to evaluate the LNA's performance with and without adopting this method in this study. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/31/12/124012 |