High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 o...

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Veröffentlicht in:Chinese physics letters 2010-11, Vol.27 (11), p.79-81
1. Verfasser: 汪洋 邱应平 潘教青 赵玲娟 朱洪亮 王圩
Format: Artikel
Sprache:eng
Schlagworte:
InGaAsP
InP
MOCVD
化学气相沉积
多量子阱激光器
德州仪器
特征温度
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Zusammenfassung:We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 of 160 K at 20°C is obtained for 500？μm？long lasers. T0 is measured as high as 88 K in the temperature range of 15？75°C. Cavity length dependence of T0 is investigated.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/11/114201