Preparation of CulnSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

The CulnSe2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CulnSe2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. It is indicated that ideal stoichiometrie CulnSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm^2. Single-phase CulnSe2 is formed in the selenization proeess, and it exhibits preferred orientation along the （112） plane. The CulnSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60℃.