An ultra-high-speed direct digital frequency synthesizer implemented in GaAs HBT technology

This paper presents a 10-GHz 8-bit direct digital synthesizer(DDS) microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger(DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture,which can maximize the utilizatio...

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Veröffentlicht in:Journal of semiconductors 2010-06, Vol.31 (6), p.83-87
1. Verfasser: 陈高鹏 吴旦昱 金智 刘新宇
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Sprache:eng
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Zusammenfassung:This paper presents a 10-GHz 8-bit direct digital synthesizer(DDS) microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger(DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture,which can maximize the utilization ratio of the GaAs HBT's high-speed potential.With an output frequency up to 5 GHz,the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band,and consumes 2.4 W of DC power from a single-4.6 VDC supply.Using 1651 GaAs HBT transistors,the total area of the DDS chip is 2.4×2.0 mm~2.
ISSN:1674-4926
DOI:10.1088/1674-4926/31/6/065002