Influence of temperature on Auger recombination lifetime in In1-xGaxAs materials
The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm^-3 and 10^18 cm^-3, respectively. The results show that the temperature has...
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| Veröffentlicht in: | 光电子快报：英文版 2010 (1), p.31-33 |
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| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm^-3 and 10^18 cm^-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x〈0.3. However, it has a great impact when x〉0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1-xGaxAs is longer than that of n-type In1-xGaxAs with the same temperature, Ga composition and carriers concentration. |
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| ISSN: | 1673-1905 |