Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD

We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been investigated by photoluminescence （PL） at different temperatures. The results show that the sample grown at higher temperature （850℃） exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AIlnGaN exhibited three-dimensional （3D） growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AIInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells （MQWs） with AllnGaN barriers. The peak wavelength for the InGaN/AIInGaN-MQW based light emitting diodes （LEDs） was very stable at various injection current levels because of the polarization-matched InGaN/AIInGaN MQWs.