A novel GAAC FinFET transistor： device analysis, 3D TCAD simulation, and fabrication

We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.