Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector

Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector

The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor photonics and technology 2007, Vol.13 (1), p.76-79
1. Verfasser: XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo
Format: Artikel
Sprache:eng
Schlagworte:
I-V热性能
PIN二极管
氮化镓
活化能
紫外光检测器
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 79
container_issue 1
container_start_page 76
container_title Semiconductor photonics and technology
container_volume 13
creator XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo
description The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is - 1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV
format Article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_backfile_24055809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>24055809</cqvip_id><sourcerecordid>24055809</sourcerecordid><originalsourceid>FETCH-chongqing_backfile_240558093</originalsourceid><addsrcrecordid>eNqNyrsOwiAUAFAGTayPf7hxJ7nS1sdo6nNxqq7NLdIWRVAgJv69ix_gdJbTY8kMccFR4HzAhiHcEDMh0ixhp7Ul8wk6gGvgyC9Qdso_yEDRkScZldchagnOwp5OvKagrvDkmls4m-jprZ1RETYqKhmdH7N-Qyaoyc8Rm-62ZXHgsnO2fWnbVjXJe6ONqkSGeb7EVfpX-gIntjuW</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector</title><source>Alma/SFX Local Collection</source><creator>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</creator><creatorcontrib>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</creatorcontrib><description>The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is - 1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV</description><identifier>ISSN: 1007-0206</identifier><language>eng</language><subject>I-V热性能 ; PIN二极管 ; 氮化镓 ; 活化能 ; 紫外光检测器</subject><ispartof>Semiconductor photonics and technology, 2007, Vol.13 (1), p.76-79</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/83887X/83887X.jpg</thumbnail><link.rule.ids>314,776,780,4010</link.rule.ids></links><search><creatorcontrib>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</creatorcontrib><title>Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector</title><title>Semiconductor photonics and technology</title><addtitle>Semiconductor Photonics and Technology</addtitle><description>The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is - 1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV</description><subject>I-V热性能</subject><subject>PIN二极管</subject><subject>氮化镓</subject><subject>活化能</subject><subject>紫外光检测器</subject><issn>1007-0206</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqNyrsOwiAUAFAGTayPf7hxJ7nS1sdo6nNxqq7NLdIWRVAgJv69ix_gdJbTY8kMccFR4HzAhiHcEDMh0ixhp7Ul8wk6gGvgyC9Qdso_yEDRkScZldchagnOwp5OvKagrvDkmls4m-jprZ1RETYqKhmdH7N-Qyaoyc8Rm-62ZXHgsnO2fWnbVjXJe6ONqkSGeb7EVfpX-gIntjuW</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2007</creationdate><title>Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector</title><author>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_backfile_240558093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>I-V热性能</topic><topic>PIN二极管</topic><topic>氮化镓</topic><topic>活化能</topic><topic>紫外光检测器</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Semiconductor photonics and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector</atitle><jtitle>Semiconductor photonics and technology</jtitle><addtitle>Semiconductor Photonics and Technology</addtitle><date>2007</date><risdate>2007</risdate><volume>13</volume><issue>1</issue><spage>76</spage><epage>79</epage><pages>76-79</pages><issn>1007-0206</issn><abstract>The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is - 1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV</abstract></addata></record>
fulltext fulltext
identifier ISSN: 1007-0206
ispartof Semiconductor photonics and technology, 2007, Vol.13 (1), p.76-79
issn 1007-0206
language eng
recordid cdi_chongqing_backfile_24055809
source Alma/SFX Local Collection
subjects I-V热性能
PIN二极管
氮化镓
活化能
紫外光检测器
title Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T07%3A19%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20I-V%20Thermal%20Characteristic%20on%20GaN-based%20p-i-n%20Ultraviolet%20Detector&rft.jtitle=Semiconductor%20photonics%20and%20technology&rft.au=XIE%20Xue-song%20ZHANG%20Xiao-ling%20LV%20Chang-zhi%20LI%20Zhi-guo%20FENG%20Shi-wei%20XU%20Li-guo&rft.date=2007&rft.volume=13&rft.issue=1&rft.spage=76&rft.epage=79&rft.pages=76-79&rft.issn=1007-0206&rft_id=info:doi/&rft_dat=%3Cchongqing%3E24055809%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=24055809&rfr_iscdi=true