Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector

Analysis of I-V Thermal Characteristic on GaN-based p-i-n Ultraviolet Detector

The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and t...

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Veröffentlicht in:Semiconductor photonics and technology 2007, Vol.13 (1), p.76-79
1. Verfasser: XIE Xue-song ZHANG Xiao-ling LV Chang-zhi LI Zhi-guo FENG Shi-wei XU Li-guo
Format: Artikel
Sprache:eng
Schlagworte:
I-V热性能
PIN二极管
氮化镓
活化能
紫外光检测器
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Zusammenfassung:The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2. 14 at 100℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is - 1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV
ISSN:1007-0206