Deposition of GaN thin film on ZnO/Si by DIBD method

The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition （DIBD） system. The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy （XPS）. It is shown that after a thin GaN film grown on the Zn/Si,the peaks of the Zn and O are not observed. This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition （DIBD） system associated with the pulsed laser deposition （PLD） method.