Preparation and Photoluminescent Properties of β-Ga2O3：Dy Nanorod Arrays

β-GaEO3：Dy nanorod arrays were prepared through a hydrothermal process following by a subsequent heat treatment. X-ray diffraction （XRD）, field emission scanning electron microscopy （FE-SEM） and photolumineseenee （PL） spectra were used to characterize the phase, morphology and PL properties of β- GaEO3：Dy nanorod arrays. FE-SEM results show that the as-formed hydrothermal products are GaOOH nanorod arrays with the aspect ratio of 3, which construeted from nanorods of 100 nm in diamete and 2 μm in length. The β-GaEO3：Dy nanorod arrays possessing the similar morphology and size with their precursors GaOOH crystal are the final products after 900 ℃ heat treatment. The PL of β-Ga2O3：Dy nanorod arrays consist of two bands, 460 - 505 nm （the maximum 491 nm） and 570 - 600 nm （the maximum 580 nm）, which assign to the transitions of Dy^3＋ , ^4F9/2-^6H15/2 and ^4F9/2-^6H13/2, respectively. The β-Ga2O3 host lattice could transfer the energy to the Dy^3＋ effectively. Compared with the solid state reaction counterparts, β- Ga2O3：Dy nanorod arsays have the more uniform morphology and the higher efficiency of energy transfer.