多晶CdS／CdTe异质结界面的能带偏移
采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS／CdTe异质结，研究了其结构、电子学性质．获得的CdS，／CdTe半导体异质结的价带偏移△Ev=0．98eV±0．05eV，导带偏移AEc=0．07±0．1eV．...
Gespeichert in:
| Veröffentlicht in: | Journal of semiconductors 2005, Vol.26 (6), p.1144-1148 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | chi |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1148 |
|---|---|
| container_issue | 6 |
| container_start_page | 1144 |
| container_title | Journal of semiconductors |
| container_volume | 26 |
| creator | 黄代绘 吴海霞 李卫 冯良桓 |
| description | 采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS／CdTe异质结，研究了其结构、电子学性质．获得的CdS，／CdTe半导体异质结的价带偏移△Ev=0．98eV±0．05eV，导带偏移AEc=0．07±0．1eV． |
| format | Article |
| fullrecord | <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_backfile_15823418</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>15823418</cqvip_id><sourcerecordid>15823418</sourcerecordid><originalsourceid>FETCH-chongqing_backfile_158234183</originalsourceid><addsrcrecordid>eNpjYeA0NDM30TWxNDLjYOAtLs5MMjCwtLAwNjEw4GTQe7pk1rOZ25xTgt_v6XdOCUl9uqfpxZYVz3dPfj615-XcRc9ntbxo3vt0x7Knjf3Pl-_mYWBNS8wpTuWF0twMSm6uIc4euskZ-XnphZl56fFJicnZaZk5qfGGphZGxiaGFsZEKQIAXPc-1g</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>多晶CdS／CdTe异质结界面的能带偏移</title><source>Alma/SFX Local Collection</source><creator>黄代绘 吴海霞 李卫 冯良桓</creator><creatorcontrib>黄代绘 吴海霞 李卫 冯良桓</creatorcontrib><description>采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS／CdTe异质结，研究了其结构、电子学性质．获得的CdS，／CdTe半导体异质结的价带偏移△Ev=0．98eV±0．05eV，导带偏移AEc=0．07±0．1eV．</description><identifier>ISSN: 1674-4926</identifier><language>chi</language><subject>Cds／CdTe异质结 ; 价带偏移 ; 导带偏移 ; 真空沉积</subject><ispartof>Journal of semiconductors, 2005, Vol.26 (6), p.1144-1148</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>黄代绘 吴海霞 李卫 冯良桓</creatorcontrib><title>多晶CdS／CdTe异质结界面的能带偏移</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS／CdTe异质结，研究了其结构、电子学性质．获得的CdS，／CdTe半导体异质结的价带偏移△Ev=0．98eV±0．05eV，导带偏移AEc=0．07±0．1eV．</description><subject>Cds／CdTe异质结</subject><subject>价带偏移</subject><subject>导带偏移</subject><subject>真空沉积</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0NDM30TWxNDLjYOAtLs5MMjCwtLAwNjEw4GTQe7pk1rOZ25xTgt_v6XdOCUl9uqfpxZYVz3dPfj615-XcRc9ntbxo3vt0x7Knjf3Pl-_mYWBNS8wpTuWF0twMSm6uIc4euskZ-XnphZl56fFJicnZaZk5qfGGphZGxiaGFsZEKQIAXPc-1g</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>黄代绘 吴海霞 李卫 冯良桓</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2005</creationdate><title>多晶CdS／CdTe异质结界面的能带偏移</title><author>黄代绘 吴海霞 李卫 冯良桓</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_backfile_158234183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>chi</language><creationdate>2005</creationdate><topic>Cds／CdTe异质结</topic><topic>价带偏移</topic><topic>导带偏移</topic><topic>真空沉积</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>黄代绘 吴海霞 李卫 冯良桓</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>黄代绘 吴海霞 李卫 冯良桓</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>多晶CdS／CdTe异质结界面的能带偏移</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2005</date><risdate>2005</risdate><volume>26</volume><issue>6</issue><spage>1144</spage><epage>1148</epage><pages>1144-1148</pages><issn>1674-4926</issn><abstract>采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS／CdTe异质结，研究了其结构、电子学性质．获得的CdS，／CdTe半导体异质结的价带偏移△Ev=0．98eV±0．05eV，导带偏移AEc=0．07±0．1eV．</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | Journal of semiconductors, 2005, Vol.26 (6), p.1144-1148 |
| issn | 1674-4926 |
| language | chi |
| recordid | cdi_chongqing_backfile_15823418 |
| source | Alma/SFX Local Collection |
| subjects | Cds／CdTe异质结 价带偏移 导带偏移 真空沉积 |
| title | 多晶CdS／CdTe异质结界面的能带偏移 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T21%3A50%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=%E5%A4%9A%E6%99%B6CdS%EF%BC%8FCdTe%E5%BC%82%E8%B4%A8%E7%BB%93%E7%95%8C%E9%9D%A2%E7%9A%84%E8%83%BD%E5%B8%A6%E5%81%8F%E7%A7%BB&rft.jtitle=Journal%20of%20semiconductors&rft.au=%E9%BB%84%E4%BB%A3%E7%BB%98%20%E5%90%B4%E6%B5%B7%E9%9C%9E%20%E6%9D%8E%E5%8D%AB%20%E5%86%AF%E8%89%AF%E6%A1%93&rft.date=2005&rft.volume=26&rft.issue=6&rft.spage=1144&rft.epage=1148&rft.pages=1144-1148&rft.issn=1674-4926&rft_id=info:doi/&rft_dat=%3Cchongqing%3E15823418%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=15823418&rfr_iscdi=true |