Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate

We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH︰H2O2=1︰10. SEM and PL resuls show that wafer bonding technique could transfer the cu...

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Veröffentlicht in:Science China. Technological sciences 2002 (3), p.255-260
1. Verfasser: SUN Yuanping(孙元平) FU Yi(付羿) QU Bo(渠波) WANG Yutian(王玉田) FENG Zhihong(冯志宏) SHEN Xiaoming(沈小明) ZHAO Degang(赵德刚) ZHENG Xinhe(郑新和) DUAN Lihong(段俐宏) LI Bingchen(李秉臣) ZHANG Shuming(张书明) YANG Hui(杨辉) JIANG Xiaoming(姜晓明) ZHENG Wenli(郑文莉) JIA Quanjie(贾全杰)
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Sprache:eng
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Zusammenfassung:We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH︰H2O2=1︰10. SEM and PL resuls show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.
ISSN:1674-7321
1869-1900