Methods and Materials for Remote Sensing: Infrared Photo-Detectors, Radiometers and Arrays

Preface. 1: Photoelectric and Noise Characteristics of Photodetectors. 1.1. Introduction. 1.2. Generation of Free Carriers in Semiconductors. 1.3. Photoelectric Characteristics of Resistive Photodetectors. 1.4. Photodetectors with P-N Junction. 1.5. Elements of the Theory of Random Processes. 1.6. Internal Noise in Photodetectors. 1.7. Concepts of Noise Coefficient and Noise Temperature. 1.8. Thermal and Quantum Noises. Elements of Microwave Radiometry. 2: Physical Principles of Infrared Radiometric Systems. 2.1. Basic Characteristics of IR-Detectors. 2.2. Threshold Characteristics of Photodetectors. 2.3. Threshold Characteristics of IR Detectors and IR-Radiometer Design Principles. 2.4. IR-Radiometer with External Modulation. 2.5. IR-Radiometers with Internal Modulation. 2.6. Methods of Calibration of IR-Radiometeric Systems. 3: Growing Technology and Electro-Physical Characteristics of Solid Solutions PbSnTe, PbSnSe and CdHdTe. 3.1. Introduction. 3.2. Physico-Chemical Properties of Solid Solutions Pb1-x SnxTe, Pb1-x SnxSe, and CdxHg1-x Te. 3.3. Technology for Growing the Single Crystals, Epitaxial Films, and Photo-Diode Structures. 3.4. Growing Single Crystals of 1-x SnxTe, [(Pb1-x Snx)1-yIny]Te and [(Pb1-x Snx)1-yCdy]Te. 3.5. Multi-Element Photodetectors. References. Index.