Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

Nucl.Instrum.Meth. A482 (2002) 395-407 In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approxi...

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Hauptverfasser:	Bolotnikov, Aleksey E, Boggs, Steven E, Chen, C. M. Hubert, Cook, Walter R, Harrison, Fiona A, Schindler, Stephen M
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Instrumentation and Detectors
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Zusammenfassung:	Nucl.Instrum.Meth. A482 (2002) 395-407 In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and
DOI:	10.48550/arxiv.physics/0103005