Negative differential resistance due to single-electron switching
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are stro...
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| Sprache: | eng |
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| Zusammenfassung: | We present the multilevel fabrication and measurement of a Coulomb-blockade
device displaying tunable negative differential resistance (NDR). Applications
for devices displaying NDR include amplification, logic, and memory circuits.
Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled
by an overlap capacitor. Our measurements agree excellently with a model based
on the orthodox theory of single-electron transport. |
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| DOI: | 10.48550/arxiv.cond-mat/9809272 |