Characterization of a fabrication process for the integration of superconducting qubits and RSFQ circuits

In order to integrate superconducting qubits with rapid-single-flux-quantum (RSFQ) control circuitry, it is necessary to develop a fabrication process that fulfills at the same time the requirements of both elements: low critical current density, very low operating temperature (tens of milliKelvin) and reduced dissipation on the qubit side; high operation frequency, large stability margins, low dissipated power on the RSFQ side. For this purpose, VTT has developed a fabrication process based on Nb trilayer technology, which allows the on-chip integration of superconducting qubits and RSFQ circuits even at very low temperature. Here we present the characterization (at 4.2 K) of the process from the point of view of the Josephson devices and show that they are suitable to build integrated superconducting qubits.