Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure

Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure

Physica E 12 (2002) 666-669 We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains quantized at the plateau value h/e^...

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Hauptverfasser: de Lang, D. T. N, Ponomarenko, L. A, de Visser, A, Possanzini, C, Olsthoorn, S. M, Pruisken, A. M. M
Format: Artikel
Sprache:eng
Schlagworte:
Physics - Mesoscale and Nanoscale Physics
Physics - Strongly Correlated Electrons
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Zusammenfassung:Physica E 12 (2002) 666-669 We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent \kappa'= 0.57 +/- 0.02 for the PI transition which is slightly different from (and possibly more accurate than) the established value 0.42 +/- 0.04 as previously obtained from the plateau-plateau (PP) transitions.
DOI:10.48550/arxiv.cond-mat/0106375