Proton irradiation on Hydrogenated Amorphous Silicon flexible devices

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Menichelli, M, Aziz, S, Bashiri, A, Bizzarri, M, Buti, C, Calcagnile, L, Calvo, D, Caprai, M, Caputo, D, Caricato, A. P, Catalano, R, Cazzanelli, M, Cirio, R, Cirrone, G. A. P, Cittadini, F, Croci, T, Cuttone, G, de Cesare, G, De Remigis, P, Dunand, S, Fabi, M, Frontini, L, Grimani, C, Guarrera, M, Hasnaoui, H, Ionica, M, Kanxheri, K, Large, M, Lenta, F, Liberali, V, Lovecchio, N, Martino, M, Maruccio, G, Maruccio, L, Mazza, G, Monteduro, A. G, Morozzi, A, Nascetti, A, Pallotta, S, Papi, A, Passeri, D, Pedio, M, Petasecca, M, Petringa, G, Peverini, F, Placidi, P, Polo, M, Quaranta, A, Quarta, G, Rizzato, S, Sabbatini, F, Servoli, L, Stabile, A, Talamonti, C, Thomet, J. E, Mora, M. S. Vasquez, Villani, M, Wheadon, R. J, Wyrsch, N, Zema, N, Tosti, L
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100{\deg}C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
DOI:10.48550/arxiv.2412.13124