Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
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| creator | Fiorenza, P Cordiano, F Alessandrino, S. M Russo, A Zanetti, E Saggio, M Bongiorno, C Giannazzo, F Roccaforte, F |
| description | The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at
fixed and constant gate bias stress, monitoring the time-dependent dielectric
breakdown (TDDB). |
| doi_str_mv | 10.48550/arxiv.2410.19545 |
| format | Article |
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| title | Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C |
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