Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

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Bibliographische Detailangaben
Hauptverfasser: Fiorenza, P, Cordiano, F, Alessandrino, S. M, Russo, A, Zanetti, E, Saggio, M, Bongiorno, C, Giannazzo, F, Roccaforte, F
Format: Artikel
Sprache:eng
Schlagworte:
Physics - Applied Physics
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Zusammenfassung:The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
DOI:10.48550/arxiv.2410.19545