Identifying Highly Deformable van der Waals Layered Chalcogenides with Superior Thermoelectric Performance Using Deformability Factors and Interpretable Machine Learning
Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are extremely limited. There is an urgent need for methods that c...
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Zusammenfassung: | Van der Waals layered chalcogenide-based flexible thermoelectric devices show
great potential for applications in wearable electronics. However, materials
that are both highly deformable and exhibit superior thermoelectric performance
are extremely limited. There is an urgent need for methods that can efficiently
predict both deformability and thermoelectric performance to enable
high-throughput screening of these materials. In this study, over 1000 van der
Waals layered chalcogenides were high-throughput screened from material
databases, the deformability of which were predicted with our previously
developed deformability factor. An accurate and efficient model based on
machine learning methods were developed to predict the thermoelectric
properties. Several candidate materials with both deformability and
thermoelectric potential were successfully discovered. Among them, NbSe2Br2 was
verified by first principles calculations, achieving ZTmax value of 1.35 at
1000K, which is currently the highest value among flexible inorganic
thermoelectric materials. And the power factor value of 8.1 {\mu}Wcm-1K-2 at
300K also surpassed most organic and inorganic flexible thermoelectric
materials. Its high deformability mainly attributed to the small slipping
energy that allows interlayer slip and the small in-plane modulus that allows
deformation before failure. The high ZTmax is mainly contributed by the
extremely low thermal conductivity and the high Seebeck coefficient along the
out-of-plane direction at high temperature. The high power factor at room
temperature is mainly comes from the high conductivity in the in-plane
direction. This study is expected to accelerate the development and application
of flexible thermoelectric devices based on inorganic semiconductor materials. |
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DOI: | 10.48550/arxiv.2410.05658 |