Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has \(\approx\)1 mW on chip power,...

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Veröffentlicht in:arXiv.org 2024-08
Hauptverfasser: Videnov, Nikolay, Day, Matthew L, Bajcsy, Michal
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum nitride
Infrared lasers
Integrated circuits
Near infrared radiation
Physics - Applied Physics
Physics - Optics
Semiconductor lasers
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Zusammenfassung:We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has \(\approx\)1 mW on chip power, 6 nm of spectral coverage, instantaneous linewidth of 720\(\pm\)80 kHz, and 12 dB side mode suppression ratio (SMSR). The red laser has 15 dB SMSR.
ISSN:2331-8422
DOI:10.48550/arxiv.2408.06971