Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields
Phys. Rev. B 110, L161405 (2024) We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields...
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Zusammenfassung: | Phys. Rev. B 110, L161405 (2024) We study the Hanle and spin polarization recovery effects on resident
electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized
electrons provide the main contribution to the spin dynamics signal at low
temperatures below 15~K for small magnetic fields of only a few mT. The spin
relaxation of these electrons is determined by random effective magnetic fields
due to a contact spin interaction, namely the hyperfine interaction with the
nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the
EuS film. From the magnetic field angular dependence of the spin polarization
we evaluate the anisotropy of the intervalley electron $g$-factor and the spin
relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value
of which is comparable to its dispersion, is attributed to randomly localized
electrons in the MoSe$_2$ layer. |
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DOI: | 10.48550/arxiv.2407.01454 |