Titanium:Sapphire-on-insulator for broadband tunable lasers and high-power amplifiers on chip
Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demons...
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Veröffentlicht in: | arXiv.org 2023-12 |
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Zusammenfassung: | Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demonstrate a monocrystalline Ti:Sa-on-insulator (Ti:SaOI) photonics platform which enables dramatic miniaturization, cost-reduction, and scalability of Ti:Sa technology. First, through fabrication of low-loss whispering gallery mode resonators, we realize a Ti:Sa laser operating with an ultra-low lasing threshold of 290 \(\mu\)W. Then, through orders-of-magnitude improvement in mode confinement in Ti:SaOI waveguides, we realize the first integrated solid-state (i.e., non-semiconductor) optical amplifier operating below 1 \(\mu\)m, with an ultra-wide bandwidth of 700 - 950 nm and peak gain of 64 dB/cm. We demonstrate unprecedented 17 dB distortion-free amplification of picosecond pulses to up to 2.3 nJ pulse energy, corresponding to a peak power of 1.0 kW. Finally, we demonstrate the first tunable integrated Ti:Sa laser, featuring narrow linewidths and a 24.7 THz tuning range, which, for the first time, can be pumped with low-cost, miniature, off-the-shelf green laser diodes. This opens doors to new modalities of Ti:Sa lasers (now occupying a footprint less than 0.15 mm\(^2\)), such as massively-scalable Ti:Sa laser array systems for a variety of applications. As a proof-of-concept demonstration, we employ a Ti:SaOI laser array as the sole optical control for a cavity quantum electrodynamics experiment with artificial atoms in silicon carbide. This work is a key step towards the democratization of Ti:Sa technology through a three orders-of-magnitude reduction in cost and footprint, as well as the introduction of solid-state broadband amplification of sub-micron wavelength light. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2312.00256 |