X-type antiferromagnetic stacking for spintronics

Physical phenomena in condensed matter normally arise from the collective effect of all atoms, while selectively addressing a lone atomic sublattice by external stimulus is elusive. The later functionality may, however, be useful for different applications due to a possible response being different...

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Hauptverfasser: Zhang, Shui-Sen, Wang, Zi-An, Li, Bo, Jiang, Yuan-Yuan, Zhang, Shu-Hui, Xiao, Rui-Chun, Liu, Lan-Xin, Luo, X, Lu, W. J, Tian, Mingliang, Sun, Y. P, Tsymbal, Evgeny Y, Du, Haifeng, Shao, Ding-Fu
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Sprache:eng
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Zusammenfassung:Physical phenomena in condensed matter normally arise from the collective effect of all atoms, while selectively addressing a lone atomic sublattice by external stimulus is elusive. The later functionality may, however, be useful for different applications due to a possible response being different from that occurring when the external stimulus affects the whole solid. Here, we introduce cross-chain antiferromagnets, where the stacking of two magnetic sublattices form a pattern of intersecting atomic chains, supportive to the sublattice selectivity. We dub this antiferromagnetic (AFM) stacking X-type and demonstrate that it reveals unique spin-dependent transport properties not present in conventional magnets. Based on high-throughput analyses and computations, we unveil three prototypes of X-type AFM stacking and identify 18 X-type AFM candidates. Using $\beta$-Fe$_{2}$PO$_{5}$ as a representative example, we predict the sublattice-selective spin-polarized transport driven by the X-type AFM stacking, where one magnetic sublattice is conducting, while the other is not. As a result, a spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the N\`eel vector capable of deterministic switching of the AFM order parameter. Our work uncovers a previously overlooked type of magnetic moment stacking and reveals sublattice-selective physical properties promising for high-performance spintronic applications.
DOI:10.48550/arxiv.2310.13271