Thermophysical Characteristics of the Porous Silicon Samples Formed by Electrochemical, Chemical and Combined Etching Methods
The article addresses the thermophysical properties of porous silicon (PS) samples produced through electrochemical (EC), metal-assisted chemical (MACE), and combined (MACE + EC) etching methods. The PS/MACE+EC sample's thermophysical properties exhibited higher values than both the PS/EC and P...
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Zusammenfassung: | The article addresses the thermophysical properties of porous silicon (PS)
samples produced through electrochemical (EC), metal-assisted chemical (MACE),
and combined (MACE + EC) etching methods. The PS/MACE+EC sample's
thermophysical properties exhibited higher values than both the PS/EC and
PS/MACE. The energy activity associated with the process of water splitting on
the surface of porous silicon (PS) formed by the metal-assisted chemical
etching (MACE) combined with the electrochemical etching (EC) method is found
to be more significant compared to the PS samples prepared using only EC or
MACE techniques. The combined MACE/EC method is considered the most effective
technique for obtaining PS with a nanoporous silicon surface, which has the
highest energy activity in water-splitting processes. The activation energy
required for water splitting, denoted as Ea (PS/MACE+EC), exhibits a higher
value compared to the activation energies observed for the Ea (PS/EC) and Ea
(PS/MACE) samples. The inclusion of nickel (Ni) particles within the pores of
porous silicon (PS) serves to stabilize the thermophysical properties of
the material. Consequently, this prevents substantial alterations in the
thermal characteristics of PS compared to PS without nickel in its pores.
The samples containing nickel (PS/MACE) and PS/MACE+EC exhibit long-term
preservation of their energy activity (Ea) for one year. This phenomenon occurs
due to the presence of nickel-containing nanopores within the samples. The
article additionally examines the thermophysical properties of porous silicon
(PS) in comparison to crystalline silicon (c-Si) and powdered silicon
(powder-Si). |
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DOI: | 10.48550/arxiv.2308.10854 |