Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz with 2.38 dB IL and 18.2% FBW
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128{\deg} Y-cut lithium niobate (LiNbO3) p...
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Veröffentlicht in: | arXiv.org 2023-07 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128{\deg} Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2307.04559 |