High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band
Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match the telecom C-band [4] stands out, while source brightness an...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , , , , |
---|---|
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Several emission features mark semiconductor quantum dots as promising
non-classical light sources for prospective quantum implementations. For
long-distance transmission [1] and Si-based on-chip processing[2, 3], the
possibility to match the telecom C-band [4] stands out, while source brightness
and high single-photon purity are key features in virtually any quantum
implementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emitting
in the telecom C-band coupled to a circular Bragg grating. The Purcell
enhancement of the emission enables a simultaneously high brightness with a
fiber-coupled single-photon count rate of 13.9MHz for an excitation repetition
rate of 228MHz (first-lens collection efficiency ca. 17% for NA = 0.6), while
maintaining a low multi-photon contribution of g(2)(0) = 0.0052. Moreover, the
compatibility with temperatures of up to 40K attainable with compact cryo
coolers, further underlines the suitability for out-of-the-lab implementations. |
---|---|
DOI: | 10.48550/arxiv.2207.12898 |