Prototypical many-body signatures in transport properties of semiconductors
We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically consistent phenomenology for transport properties in semicond...
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Veröffentlicht in: | arXiv.org 2021-12 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically consistent phenomenology for transport properties in semiconductors. We demonstrate that the scattering rate (inverse lifetime) is a relevant energy scale: It causes the emergence of several characteristic features in each transport observable. The theory is capable to reproduce -- with only a minimal input electronic structure -- the full temperature profiles measured in correlated narrow-gap semiconductors. In particular, we account for the previously elusive low-\(T\) saturation of the resistivity and the Hall coefficient, as well as the (linear) vanishing of the Seebeck and Nernst coefficient in systems, such as FeSb\(_2\), FeAs\(_2\), RuSb\(_2\) and FeGa\(_3\). |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2112.07604 |