Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:arXiv.org 2022-09
Hauptverfasser: Zapf, Michael, Schmitt, Matthias, Gabel, Judith, Scheiderer, Philipp, Stübinger, Martin, Leikert, Berengar, Sangiovanni, Giorgio, Lenart Dudy, Chernov, Sergii, Babenkov, Sergey, Vasilyev, Dmitry, Fedchenko, Olena, Medjanik, Katerina, Matveyev, Yury, Gloskowski, Andrei, Schlueter, Christoph, Tien-Lin, Lee, Elmers, Hans-Joachim, Schönhense, Gerd, Sing, Michael, Claessen, Ralph
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO\(_3\) (001) crystal by pulsed laser deposition of a disordered LaAlO\(_3\) film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO\(_3\) due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the \(k\) broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
ISSN:2331-8422
DOI:10.48550/arxiv.2110.15158