Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized th...

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Veröffentlicht in:	arXiv.org 2021-04
Hauptverfasser:	Hertel, A, Andersen, L O, D M T van Zanten, Eichinger, M, Scarlino, P, Yadav, S, Karthik, J, Gronin, S, Gardner, G C, Manfra, M J, Marcus, C M, Petersson, K D
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Critical current (superconductivity) Electric potential Electrical junctions Electrical properties Hybrid structures Indium arsenides Josephson junctions Physics - Mesoscale and Nanoscale Physics Physics - Superconductivity Semiconductor materials Silicon Silicon substrates Voltage
Online-Zugang:	Volltext
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