Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of \(\mu \approx 3200\,\mathrm{cm^2/Vs}\) for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, \(\mathcal{T} \approx 0.75 \), gate voltage tunable switching current with a product of critical current and normal state resistance, \(I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{\mu V}\), and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.