Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots...
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Veröffentlicht in: | arXiv.org 2020-11 |
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Sprache: | eng |
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Zusammenfassung: | Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic \(g\)-factor of \(16\) and a typical magnitude of the random hyperfine fields on the dots of \(\sim 0.6\, \mathrm{mT}\). We estimate the spin-orbit length in the system to be \(\sim 5-10\, \mu \mathrm{m}\), which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2011.13865 |