Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn$_3$Sn

Phys. Rev. Research 2, 043366 (2020) Here, we present a detailed theoretical and experimental study on the pressure induced switching of anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) compound Mn$_3$Sn. Our theoretical model suggests pressure driven significant splitting of th...

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Hauptverfasser: Singh, Charanpreet, Singh, Vikram, Pradhan, Gyandeep, Srihari, Velaga, Poswal, Himanshu Kumar, Nath, Ramesh, Nandy, Ashis K, Nayak, Ajaya K
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Sprache:eng
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Zusammenfassung:Phys. Rev. Research 2, 043366 (2020) Here, we present a detailed theoretical and experimental study on the pressure induced switching of anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) compound Mn$_3$Sn. Our theoretical model suggests pressure driven significant splitting of the in-plane Mn bond lengths $i.e.$ an effective trimerization, which in turn stabilizes a helical AFM ground state by modifying the inter-plane exchange parameters in the system. We experimentally demonstrate that the AHE in Mn$_3$Sn reduces from 5$\mu\Omega$ cm at ambient pressure to zero at an applied pressure of about 1.5 GPa. Furthermore, our pressure dependent magnetization study reveals that the conventional triangular AFM ground state of Mn$_3$Sn systematically transforms into the helical AFM phase where the symmetry does not support a non-vanishing Berry curvature required for the realization of a finite AHE. The pressure dependent x-ray diffraction (XRD) study rules out any role of structural phase transition in the observed phenomenon. In addition, the temperature dependent in-plane lattice parameter at ambient pressure is found to deviate from the monotonic behavior when the system enters into the helical AFM phase, thereby, supporting the proposed impact of trimerization in controlling the AHE. We believe that the present study makes an important contribution towards understanding the stabilization mechanism of different magnetic ground states in Mn$_3$Sn and related materials for their potential applications pertaining to AHE switching.
DOI:10.48550/arxiv.2011.10476